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| BYT40Y Vishay Telefunken Silicon Mesa Rectifier Features D Hermetically sealed axial-leaded glass envelope D Glass passivated D Low reverse current D High reverse voltage Applications Electronic ballast and lighting SMPS 95 10526 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage=Repetitive peak reverse voltage Peak forward surge current Average forward current Junction and storage temperature range Test Conditions Type Symbol VR=VRRM IFSM IFAV Tj=Tstg Value 1600 25 1 -55...+150 Unit V A A C tp=8.3ms, half-sinewave Tamb=40C, l = 10 mm Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions lead length l= 10mm, TL = constant on PC board with 25mm spacing Symbol RthJA RthJA Value 60 110 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Reverse recovery time Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150C VR=4.0V, f= 1MHz IF=0.5A, IR=1A, iR=0.25A Type Symbol VF IR IR CD trr Min Typ Max 1.3 5 150 3 Unit V mA mA pF 6 2 ms Document Number 86023 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 1 (4) BYT40Y Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) 300 PR - Reverse Power Dissipation ( mW ) VR = VRRM 250 200 150 100 50 0 25 15779 10 RthJA= 45K/W 100K/W 160K/W PR-Limit @80%VR PR-Limit @100%VR Tj = 150C 1 Tj = 25C 0.1 IF - Forward Current ( A ) 150 15777 0.01 0.001 50 75 100 125 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 VF - Forward Voltage ( V ) Tj - Junction Temperature ( C ) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1000 VR = VRRM Figure 4. Max. Forward Current vs. Forward Voltage 16 CD - Diode Capacitance ( pF ) 14 12 10 8 6 4 2 0 0.1 14362 f=1MHz I R - Reverse Current ( mA ) 100 10 1 25 15780 50 75 100 125 150 1.0 10.0 100.0 Tj - Junction Temperature ( C ) VR - Reverse Voltage ( V ) Figure 2. Max. Reverse Current vs. Junction Temperature 1.2 I FAV- Average Forward Current ( A ) 1.0 0.8 0.6 0.4 0.2 0 0 15778 Figure 5. Typ. Diode Capacitance vs. Reverse Voltage R thJA - Therm. Resist. Junction / Ambient ( K/W ) 120 100 80 60 l 40 20 0 0 5 10 15 TL=constant 20 25 30 l - Lead Length ( mm ) l VR = VR RM half sinewave RthJA=60K/W l=10mm RthJA=110K/W PCB: d=25mm 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature ( C ) 96 12151 Figure 3. Max. Average Forward Current vs. Ambient Temperature Figure 6. Max. Thermal Resistance vs. Lead Length www.vishay.de * FaxBack +1-408-970-5600 2 (4) Document Number 86023 Rev. 2, 24-Jul-98 BYT40Y Vishay Telefunken Dimensions in mm Standard Glass Case DOT 30 B Weight max. 0.5 g 3 max. Cathode Identification 95 10524 technical drawings according to DIN specifications 0.82 max. 26 min. 4.2 max. 26 min. Document Number 86023 Rev. 2, 24-Jun-98 www.vishay.de * FaxBack +1-408-970-5600 3 (4) BYT40Y Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de * FaxBack +1-408-970-5600 4 (4) Document Number 86023 Rev. 2, 24-Jul-98 |
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